BSP61H6327XTSA1

Infineon BSP61H6327XTSA1 PNP 达林顿晶体管对, 1 A, Vce=60 V, HFE=2000, 3+Tab引脚 SOT-223封装

复合，

得捷:
TRANS PNP DARL 60V 1A SOT223-4

立创商城:
PNP 60V 1A

欧时:
Infineon BSP61H6327XTSA1 PNP 达林顿晶体管对, 1 A, Vce=60 V, HFE=2000, 3+Tab引脚 SOT-223封装

艾睿:
If you require a higher current gain value in your circuit, then the PNP BSP61H6327XTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA|2.2@1mA@1A V. This product&s;s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.55mA@500mA|1.8@1mA@1A V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

安富利:
Trans Darlington PNP 60V 2A 4-Pin SOT-223 T/R

TME:
Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223

Verical:
Trans Darlington PNP 60V 1A 1500mW Automotive 4-Pin3+Tab SOT-223 T/R

Win Source:
TRANS PNP DARL 60V 1A SOT223