APT33GF120BRG

功率半导体功率模块 Power Semiconductors Power Modules

Use the IGBT transistor from as an electronic switch. Its maximum power dissipation is 297000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.