BSD316SNH6327XTSA1

晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.12 ohm, 10 V, 1.6 V

Summary of Features:

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Enhancement mode

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Avalanche rated

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Pb-free lead plating; RoHS compliant

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Qualified according to AEC Q101

得捷:
MOSFET N-CH 30V 1.4A SOT363-6

欧时:
Infineon MOSFET BSD316SNH6327XTSA1

立创商城:
N沟道 30V 1.4A

贸泽:
MOSFET SMALL SIGNAL N-CH

e络盟:
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.12 ohm, 10 V, 1.6 V

艾睿:
Make an effective common gate amplifier using this BSD316SNH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos 2 technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 1.4A 6-Pin SOT-363 T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363

Verical:
Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R