FS3L25R12W2H3_B11
IGBT模块
Summary of Features:
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- High Speed IGBT H3
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- Low Switching Losses
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- Fast Si clamping diodes 25A 650V
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- Al 2 O 3 Substrate with Low Thermal Resistance
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- PressFIT Contact Technology
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- Rugged mounting due to integrated mounting clamps
Benefits:
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- Compact design
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- Optimized customer’s development cycle time and cost