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IXTP18P10T

TO-220AB P-CH 100V 18A

P-Channel 100V 18A Tc 83W Tc Through Hole TO-220AB


得捷:
MOSFET P-CH 100V 18A TO220AB


艾睿:
Make an effective common gate amplifier using this IXTP18P10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 83000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.


Chip1Stop:
Trans MOSFET P-CH 100V 18A 3-Pin3+Tab TO-220AB


Verical:
Trans MOSFET P-CH 100V 18A 3-Pin3+Tab TO-220AB


Win Source:
MOSFET P-CH 100V 18A TO-220


IXTP18P10T PDF数据文档
图片 型号 厂商 下载
IXTP18P10T IXYS Semiconductor
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IXTP90N055T IXYS Semiconductor
IXTP220N055T IXYS Semiconductor
IXTP152N085T IXYS Semiconductor
IXTP200N085T IXYS Semiconductor
IXTP76N075T IXYS Semiconductor
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IXTP70N085T IXYS Semiconductor