IRFBA1405PPBF

Trans MOSFET N-CH 55V 174A 3Pin3+Tab TO-273AA Tube

Description

Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.

Benefits

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Typical Applications

Industrial Motor Drive