MMRF1023HSR5

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V

RF Mosfet LDMOS 28V 750mA 2.3GHz 14.9dB 66W NI-1230-4LS2L

得捷:
FET RF 65V 2.3GHZ NI-1230-4LS2L

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V

艾睿:
RF POWER LDMOS TRANSISTOR N-CHANNEL ENHANCEMENT--MODE LATERAL MOSFET

RfMW:
RF Power Transistor,2300 to 2400 MHz, 275 W, Typ Gain in dB is 14.9 @ 2300 MHz, 28 V, LDMOS, SOT1800