BGB707L7ESDE6327XTSA1

射频放大器, AEC-Q101, 150MHz至10GHz, 27dB增益, 0.4dB噪声, 1.8V至4V, TSLP-7

Description:

The BGB707L7ESD is a Silicon Germanium Carbon SiGe:C low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package

Summary of Features:

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 High performance general purpose wide band MMIC LNA

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 ESD protection integrated for all pins 3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM

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Integrated active biasing circuit enables stable operation point against temperature- and processing-variations

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Excellent noise figure from Infineon´s reliable high volume SiGe:C technology

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 High gain and linearity at low current consumption

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 Operation voltage: 1.8 V to 4.0 V

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 Adjustable operation current 2.1 mA to 25 mA by external resistor

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Power-off function

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Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3

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Pb-free RoHS compliant and halogen-free WEEE compliant package Applications