PSMN0R9-30YLD

NXP  PSMN0R9-30YLD  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 1.5 V

The is a 30V logic level N-channel Enhancement Mode MOSFET using NextPowerS3 technology. NextPowerS3 portfolio utilising "s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. It is particularly suited to high efficiency applications at high switching frequencies. Suitable for on-board DC-to-DC solutions for server and telecommunications and secondary-side synchronous rectification in telecommunication applications.

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Avalanche rated, 100% tested at I as = 190A

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Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

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Superfast switching with soft-recovery, s-factor >1

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Low spiking and ringing for low EMI designs

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Optimised for 4.5V gate drive

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Low parasitic inductance and resistance

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High reliability clip bonded and solder die attach power SO8 package

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Wave solderable exposed leads for optimal visual solder inspection