JS28F640P30T85
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 85ns 56Pin TSOP
Introduction
This document provides information about the StrataFlash® Embedded Memory P30 device and describes its features, operation, and specifications.
Product Features
■ High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming BEFP at 5 µs/byte Typ
— 1.8 V buffered programming at 7 µs/byte Typ
■ Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
■ Voltage and Power
—VCCcore voltage: 1.7 V – 2.0 V
—VCCQ I/O voltage: 1.7 V – 3.6 V
— Standby current: 55 µA Typ for 256-Mbit
— 4-Word synchronous read current: 13 mA Typ at 40 MHz
■ Quality and Reliability
— Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology 130 nm
■ Security
— One-Time Programmable Registers:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
• 4x32KB parameter blocks + 3x128KB main blocks top or bottom configuration
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■ Software
— 20 µs Typ program suspend
— 20 µs Typ erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
■ Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus
