TE28F008B3T120

SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE 8Mbit 1024K x 8, 16Mbit 2056K x 8 FLASH MEMORY FAMILY

Flexible SmartVoltage Technology

 2.7V–3.6V Program/Erase

 2.7V–3.6V Read Operation

 12V VPP Fast Production

Programming

2.7V or 1.8V I/O Option

 Reduces Overall System Power

Optimized Block Sizes

 Eight 8-Kbyte Blocks for Data,

Top or Bottom Locations

 Up to Thirty-One 64-Kbyte Blocks

for Code

High Performance

 2.7V–3.6V: 120 ns Max Access Time

Block Locking

 VCC-Level Control through WP#

Low Power Consumption

 20 mA Maximum Read Current

Absolute Hardware-Protection

 VPP = GND Option

 VCC Lockout Voltage

Extended Temperature Operation

 –40°C to +85°C

Supports Code plus Data Storage

 Optimized for FDI, Flash Data

Integrator Software

 Fast Program Suspend Capability

 Fast Erase Suspend Capability

Extended Cycling Capability

 10,000 Block Erase Cycles

Automated Byte Program and Block

Erase

 Command User Interface

 Status Registers

SRAM-Compatible Write Interface

Automatic Power Savings Feature

Reset/Deep Power-Down

 1 µA ICCTypical

 Spurious Write Lockout

Standard Surface Mount Packaging

 48-Ball µBGA

.

Package

 40-Lead TSOP Package

Footprint Upgradeable

 Upgradeable from 2-, 4- and 8-Mbit

Boot Block

ETOX™ V 0.4 µ Flash Technology

x8-Only Input/Output Architecture

 For Space-Constrained 8-bit

Applications