F3L50R06W1E3B11BOMA1

晶体管, IGBT阵列&模块, N沟道, 75 A, 1.45 V, 175 W, 600 V, Module

Summary of Features:

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Low inductive design

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Low Switching Losses

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Low VCEsat

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Al2O3 Substrate with Low Thermal Resistance

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Compact Design

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PressFIT Contract Technology

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Rugged mounting due to integrated mounting clamps

Benefits:

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Compact module concept

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Optimized customer’s development cycle time and cost

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Configuration flexibility