S29GL128M90TAIR10

IC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56Pin,PLASTIC

256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology

General Description

The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

   — 3 volt read, erase, and program operations

■ Manufactured on 0.23 µm MirrorBit process technology

■ Secured Silicon Sector region

   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

   — May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

   — 256 Mb: 512 32-Kword 64 Kbyte sectors

   — 128 Mb: 256 32-Kword 64 Kbyte sectors

   — 64 Mb uniform sector models: 128 32-Kword 64-Kbyte sectors or 128 32 Kword sectors

   — 64 Mb boot sector models: 127 32-Kword 64-Kbyte sectors + 8 4Kword 8Kbyte boot sectors

   — 32 Mb uniform sector models: 64 32-Kword 64-Kbyte sectors of 64 32-Kword sectors

   — 32 Mb boot sector models: 63 32-Kword 64 Kbyte sectors + 8 4-Kword 8-Kbyte boot sectors

■ Compatibility with JEDEC standards

   — Provides pinout and software compatibility for single power supply flash, and superior inadvertent write protection

■ 100,000 erase cycles typical per sector

■ 20-year data retention typical

Performance Characteristics

■ High performance

   — 90 ns access time 128 Mb, 64 Mb, 32 Mb, 100 ns access time 256 Mb

   — 4-word/8-byte page read buffer

   — 25 ns page read times 128 Mb, 64 Mb, 32 Mb

   — 30 ns page read times 256 Mb

   — 16-word/32-byte write buffer

   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates

■ Low power consumption typical values at 3.0 V, 5 MHz

   — 18 mA typical active read current 64 Mb, 32 Mb

   — 25 mA typical active read current 256 Mb, 128 Mb

   — 50 mA typical erase/program current

   — 1 µA typical standby mode current

■ Package options

   — 40-pin TSOP

   — 48-pin TSOP

   — 56-pin TSOP

   — 64-ball Fortified BGA

   — 48-ball fine-pitch BGA

   — 63-ball fine-pitch BGA

Software & Hardware Features

■ Software features

   — Program Suspend & Resume: read other sectors before programming operation is completed

   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed

   — Data# polling & toggle bits provide status

   — CFI Common Flash Interface compliant: allows host system to identify and accommodate multiple flash devices

   — Unlock Bypass Program command reduces overall multiple-word programming time

■ Hardware features

   — Sector Group Protection: hardware-level method of preventing write operations within a sector group

   — Temporary Sector Unprotect: VID-level method of charging code in locked sectors

   — WP#/ACC input accelerates programming time when high voltage is applied for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models

   — Hardware reset input RESET# resets device

   — Ready/Busy# output RY/BY# detects program or erase cycle completion