IPG20N06S2L35ATMA1

INFINEON  IPG20N06S2L35ATMA1  双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.028 ohm, 10 V, 1.6 V

OptiMOS™ 双电源 MOSFET

得捷:
MOSFET 2N-CH 55V 20A 8TDSON

立创商城:
2个N沟道 55V 20A

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET IPG20N06S2L35ATMA1, 20 A, Vds=55 V, 8引脚 TDSON封装

贸泽:
MOSFET N-CHANNEL_55/60V

e络盟:
双路场效应管, MOSFET, N沟道, 55 V, 20 A, 0.028 ohm, TDSON, 表面安装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPG20N06S2L35ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 65000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP

Verical:
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  IPG20N06S2L35ATMA1  MOSFET, DUAL N CH, 55V, 20A, TDSON-8 New

Win Source:
MOSFET 2N-CH 55V 20A TDSON-8-4