IRF3805SPBF

MOSFET, Power; N-Ch; VDSS 55V; RDSON 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20

Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety

of other applications.

**Features**:

* Advanced Process Technology

* Ultra Low On-Resistance

* 175°C Operating Temperature

* Fast Switching

* Repetitive Avalanche Allowed Up to Tj Max.

* Lead-Free