MOS场效应管/2SK4108
Switching Regulator Applications
Low drain−source ON resistance : RDS ON= 0. 21Ωtyp.
High forward transfer admittance : |Yfs| = 14 S typ.
Low leakage current : IDSS= 100 μA max VDS= 500 V
Enhancement mode : Vth= 2.0~4.0 V VDS= 10 V, ID= 1 mA
Win Source:
Silicon N-Channel MOS Type Switching Regulator Applications
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SK4108 | Toshiba 东芝 | |
| 2SK4107 | Toshiba 东芝 | |
 | 2SK4037TE12L,Q | Toshiba 东芝 | |
 | 2SK4150TZ-E | Renesas Electronics 瑞萨电子 | |
 | 2SK4151TZ-E | Renesas Electronics 瑞萨电子 | |
 | 2SK4093TZ-E | Renesas Electronics 瑞萨电子 | |
 | 2SK4057-ZK-E1-AY | Renesas Electronics 瑞萨电子 | |
 | 2SK4069-ZK-E1-AY | Renesas Electronics 瑞萨电子 | |
 | 2SK4080-ZK-E1-AY | Renesas Electronics 瑞萨电子 | |
 | 2SK4091-ZK-E1-AY | Renesas Electronics 瑞萨电子 | |
 | 2SK4197FS | ON Semiconductor 安森美 |
