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AIKW20N60CT

Infineon"s Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed.

Summary of Features:

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Very low V CEsat 1.5V typ.
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Maximum junction temperature 175°C
.
Short circuit withstand time 5µs
.
Positive temperature coefficient in V CEsat
.
Low EMI
.
Low gate charge
.
Green package
.
Very soft, fast recovery anti-parallel Emitter Controlled HE diode

AIKW20N60CT PDF数据文档
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