FDC5612

FAIRCHILD SEMICONDUCTOR  FDC5612  晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V

The is a N-channel MOSFET produced using Semiconductor"s proprietary PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.

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High performance Trench technology for extremely low RDS ON

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12.5nC Typical low gate charge