BVSS123LT1G

100V,6Ω,170mA,单N沟道功率MOSFET

N-Channel 100V 170mA Ta 225mW Ta Surface Mount SOT-23-3

立创商城:
BVSS123LT1G

得捷:
MOSFET N-CH 100V 170MA SOT-23-3

欧时:
ON Semiconductor, BVSS123LT1G

贸泽:
MOSFET NFET 100V 170MA 6OH

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 170 mA, 6 ohm, SOT-23, 表面安装

艾睿:
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the BVSS123LT1G power MOSFET. Its maximum power dissipation is 225 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

Verical:
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R

力源芯城:
100V,6Ω,170mA,单N沟道功率MOSFET

Win Source:
MOSFET N-CH 100V 170MA SOT-23-3