IRGS4715DTRRPBF
Trans IGBT Chip N-CH 650V 21A 100000mW 3Pin2+Tab D2PAK T/R
Benefits:
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- Low VCEON and Switching Losses
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- 5.5µs Short Circuit SOA
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- Square RBSOA
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- Maximum Junction Temperature 175°C
- .
- Positive VCEON Temperature Coefficient
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- Lead-Free, RoHs compliant
得捷:
IGBT 650V D2-PAK
艾睿:
Trans IGBT Chip N-CH 650V 21A 100000mW 3-Pin2+Tab D2PAK T/R
安富利:
Trans IGBT Chip N-CH 650V 21A 3-Pin D2PAK T/R