SST39SF040-70-4I-WHE

MICROCHIP  SST39SF040-70-4I-WHE  闪存, 或非, 4 Mbit, 512K x 8位, TSOP, 32 引脚

The is a 4MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.

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Superior reliability

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Low power consumption

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Sector-erase capability - uniform 4Kbyte word sectors

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Fast read access time - 70ns

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Latched address and data

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Automatic write timing - internal VPP generation

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Fast erase and byte-program

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End-of-write detection

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TTL I/O compatibility