TSM7N65CI

TAIWAN SEMICONDUCTOR  TSM7N65CI  功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1 ohm, 10 V, 2 V

The is a 650V N-channel enhancement-mode Power MOSFET produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

.

Fast switching

.

Low gate charge

.

Low RDS ON

.

Low CRSS