IXFH12N100

IXYS SEMICONDUCTOR IXFH12N100 功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V

The is a 1000V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode HiPerFET™ and low RDS on HDMOS™ process. The IXYS most popular power MOSFET HiPerFET™ is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.

.: Rugged polysilicon gate cell structure

.: Unclamped Inductive Switching UIS rated

.: Low inductance offers easy to drive and protect

.: Fast intrinsic rectifier

.: Space-saving s

.: High power density

IXFH12N100详细参数

IXFH12N100 PDF数据文档

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