BFR181 E6327

NPN硅RF晶体管低噪声，高增益宽带放大器集电极电流从0.5mA到12mAfT = 8 GHz F = 1.45 dB at 900 MHz

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V

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集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 12V

集电极连续输出电流ICCollector CurrentIC| 20mA

截止频率fTTranstion FrequencyfT| 8Ghz

直流电流增益hFEDC Current GainhFE| 50~200

管压降VCE（sat）Collector-Emitter Saturation Voltage|

耗散功率PcPower Dissipation| 175mW/0.175W

Description & Applications| NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45dB at 900 MHz

描述与应用| NPN硅RF 低噪声，高增益宽带放大器集电极电流从0.5mA到12mA fT = 8 GHz F = 1.45 dB at 900 MHz