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L6747CTR

L6747 系列 双通道 3.5 A 12 V 高边和低边 MosFet驱动器 表面贴装 - VFDFPN-8

Drive a high voltage and high current line with a transistor a certain way with this power driver manufactured by STMicroelectronics. This device has a maximum propagation delay time of 45 ns and a maximum power dissipation of 2250 mW. Its maximum power dissipation is 2250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device has a minimum operating supply voltage of 5 V and a maximum of 12 V. This gate driver has an operating temperature range of 0 °C to 125 °C.

L6747CTR PDF数据文档
图片 型号 厂商 下载
L6747CTR ST Microelectronics 意法半导体
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L6741 ST Microelectronics 意法半导体
L6743BTR ST Microelectronics 意法半导体
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