BUK766R0-60E

NXP  BUK766R0-60E  晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 µohm, 10 V, 3 V

The is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

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Repetitive avalanche rated

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Suitable for thermally demanding environments due to 175°C rating

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True standard level gate with VGS th rating of greater than 1V at 175°C

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-55 to 175°C Junction temperature range