IF4501

N-Channel Silicon Junction Field-Effect Transistor

• Low-Noise, High Gain Amplifier

Absolute maximum ratings at TA= 25°C

Reverse Gate Source & Reverse Gate Drain Voltage           – 20 V

Continuous Forward Gate Current                                    10 mA

Continuous Device Power Dissipation                               300 mW

Power Derating                                                           2.4 mW/°C

Storage Temperature Range                                        – 65°C to 200°C

贸泽:
JFET N-Ch -20Vgss -0.35V 10mA 300mW 2.4mW