SI4835DY

P沟道逻辑电平的PowerTrench MOSFET P-Channel Logic Level PowerTrench MOSFET

General Description

This P-Channel Logic Level MOSFET is produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

• -8.8 A, -30 V. RDSON = 0.020 Ω @ VGS = -10 V

                    RDSON = 0.035 Ω @ VGS = -4.5 V

• Extended VGSS range ±25V for battery applications.

• Low gate charge 19nC typical.

• Fast switching speed.

• High performance trench technology for extremely low RDSON.

• High power and current handling capability.