IRFP350LCPBF
VISHAY IRFP350LCPBF 晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
The is a HEXFET® N-channel low charge Power MOSFET achieves significantly lower gate charge over conventional MOSFET. Utilizing advanced HEXFET® technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. This device improvement combined with the proven ruggedness and reliability of HEXFET® is offer the designer a new standard in power transistors for switching applications.
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- Ultra-low gale charge
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- Reduced gate drive requirement
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- Enhanced 30V Vp rating
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- Reduced CISS, COSS and CRSS
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- Isolated central mounting hole
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- Dynamic dV/dt rating
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- Repetitive avalanche rating