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CV201210-4R7K

铁氧体多层片式电感器 Ferrite Multi-Layer Chip Inductors

屏蔽 多层 器 1 欧姆最大 0805(2012 公制)


得捷:
FIXED IND 4.7UH 30MA 1 OHM SMD


立创商城:
4.7uH ±10% 1Ω


e络盟:
高频电感器, 4.7 µH, CV201210 Series, 30 mA, 0805 [2012 公制], 多层, 1 ohm


艾睿:
This chip CV201210-4R7K surface mount inductor from Bourns is available in all standard chip sizes in multilayer thick film and thin film deposition and wire wound styles. This SMD inductor has a minimum operating temperature of -55 °C and a maximum of 125 °C. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a tolerance of 10%. This SMD inductor has a maximum DC current of 30m A with a maximum resistance of 1 Ohm. It has an inductance of 4.7u H. Its test frequency is 10M Hz, while its minimum self-resonant frequency is 35M Hz. This device is made with multi-layer technology. This product is 2.2 mm long, 1.45 mm tall and 1.45 mm deep.


安富利:
Ind Chip Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 T/R


Chip1Stop:
Ind Chip Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 30mA 2.0 x 1.2 mm T/R


Verical:
Inductor RF Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 0.03A 1Ohm DCR 0805 T/R


MASTER:
Inductor Chip Shielded Multi-Layer 4.7uH 5% 10MHz 45Q-Factor Ferrite 15mA 1Ohm DCR 0805 T/R


Electro Sonic:
Inductor Chip Shielded Multi-Layer 4.7uH 5% 10MHz 45Q-Factor Ferrite 15mA 1Ohm DCR 0805 T/R


CV201210-4R7K PDF数据文档
图片 型号 厂商 下载
CV201210-4R7K Bourns J.W. Miller 伯恩斯
CV201210-1R2K Bourns J.W. Miller 伯恩斯
CV201210-R39K Bourns J.W. Miller 伯恩斯
CV201210-R10K Bourns J.W. Miller 伯恩斯
CV201210-68NK Bourns J.W. Miller 伯恩斯
CV201210-3R9K Bourns J.W. Miller 伯恩斯
CV201210-2R2K Bourns J.W. Miller 伯恩斯
CV201210-R15K Bourns J.W. Miller 伯恩斯
CV201210-R47K Bourns J.W. Miller 伯恩斯
CV201210-6R8K Bourns J.W. Miller 伯恩斯
CV201210-2R7K Bourns J.W. Miller 伯恩斯