FDB2614

FAIRCHILD SEMICONDUCTOR  FDB2614  晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.

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High performance Trench technology for extremely low RDS ON

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Low gate charge

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High power and current handing capability