STP10NM60ND

STMICROELECTRONICS  STP10NM60ND  功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.57 ohm, 10 V, 4 V

N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics

得捷:
MOSFET N-CH 600V 8A TO220

欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STP10NM60ND, 8 A, Vds=600 V, 3引脚 TO-220封装

e络盟:
# STMICROELECTRONICS  STP10NM60ND  功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.57 ohm, 10 V, 4 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STP10NM60ND power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 8A 3-Pin3+Tab TO-220 Tube

富昌:
N-Channel 650 V 0.6 Ohm Flange Mount MDmesh II Power MosFet - TO-220

Chip1Stop:
Trans MOSFET N-CH 600V 8A 3-Pin3+Tab TO-220 Tube

Verical:
Trans MOSFET N-CH 600V 8A 3-Pin3+Tab TO-220AB Tube

力源芯城:
600V,8A,N沟道MOSFET