DCX53-16-13

Trans GP BJT PNP 80V 1A 4Pin3+Tab SOT-89 T/R

Bipolar BJT Transistor PNP 80V 1A 200MHz 1W Surface Mount SOT-89-3

立创商城:
PNP 80V 1A

得捷:
TRANS PNP 80V 1A SOT89-3

贸泽:
Bipolar Transistors - BJT 1000W -80Vceo

艾睿:
The versatility of this PNP DCX53-16-13 GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 80V 1A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT PNP 80V 1A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT PNP 80V 1A 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS PNP 80V 1A SOT89-3

DeviceMart:
TRANSISTOR BIPO PNP 80V SOT89-3