BC850CWH6327XTSA1

Infineon BC850CWH6327XTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:420, 250 MHz, 3引脚 SOT-323 SC-70封装

小信号 NPN ，

得捷:
TRANS NPN 45V 0.1A SOT323

欧时:
Infineon BC850CWH6327XTSA1 , NPN 晶体管, 100 mA, Vce=45 V, HFE:110, 250 MHz, 3引脚 SOT-323 SC-70封装

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC850CWH6327XTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin SOT-323 T/R