MA3S7810GL
•肖特基势垒二极管(SBD)•硅外延平面型•开关电路•高频整流,快速反向恢复时间短(TRR)•低VF(正向电压上升),整流效率高
反向电压VrReverse Voltage| 30V \---|--- 平均整流电流IoAVerage Rectified Current| 30ma 最大正向压降VFForward VoltageVf | 1V 最大耗散功率PdPower dissipation| Description & Applications| • Schottky Barrier Diodes SBD • Silicon epitaxial planar type • For the switching circuit • 1608 type diode contained in the SS-mini package • Surface mounting, allowing high-density mounting • Optimum for high-frequency rectification because of its short reverse recovery time trr • Low VF forward rise voltage, with high rectification efficiency 描述与应用| •肖特基势垒(SBD) •硅外延平面型 •开关电路 •高频整流,快速反向恢复时间短(TRR) •低VF(正向电压上升),整流效率高