BSC025N03LSGATMA1

INFINEON  BSC025N03LSGATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V

表面贴装型 N 通道 25A（Ta），100A（Tc） 2.5W（Ta），83W（Tc） PG-TDSON-8-5

得捷:
MOSFET N-CH 30V 25A/100A TDSON

e络盟:
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSC025N03LSGATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP

Chip1Stop:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R

罗切斯特:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP

Win Source:
MOSFET N-CH 30V 100A TDSON-8