RHK003N06

RHK003N06 N沟道MOSFET 60v 11A TO-252/D-PAK marking/标记 RKS 低噪声

最大源漏极电压Vds Drain-Source Voltage| 60v \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 16v 最大漏极电流Id Drain Current| 11A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.107Ω/Ohm @8A,5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-3V 耗散功率Pd Power Dissipation| 38W Description & Applications| 4V Drive Nch MOS FET Silicon N-channel MOS FET Features • 11A, 60V • rDSON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature TB334 “Guidelines for Soldering Surface Mount Components to PC Boards 描述与应用| 4V驱动N沟道MOS FET 硅N沟道MOS FET •温度补偿的PSPICE模型 •峰值电流与脉冲宽度曲线 •UIS等级曲线 •相关文献 TB334“指南焊锡表面装载 组件到PC板