IRLR2705PBF

Trans MOSFET N-CH 55V 28A 3Pin2+Tab DPAK Tube

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount IRLR2705

Straight Lead IRLU2705

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

Lead-Free