IS61C25616AL-10KLI

静态随机存取存储器 4M 256Kx16 10ns Async 静态随机存取存储器

DESCRIPTION

The ISSI IS61C25616AL/AS and IS64C25616AL/AS are high-speed,4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI"s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

FEATURES

HIGH SPEED: IS61/64C25616AL

   • High-speed access time: 10ns, 12 ns

   • Low Active Power: 150 mW typical

   • Low Standby Power: 10 mW typical CMOS standby

LOW POWER: IS61/64C25616AS

   • High-speed access time: 25 ns

   • Low Active Power: 75 mW typical

   • Low Standby Power: 1 mW typical CMOS standby

• TTL compatible interface levels

• Single 5V ± 10% power supply

• Fully static operation: no clock or refresh required

• Available in 44-pin SOJ package and 44-pin TSOP Type II

• Commercial, Industrial and Automotive temperature ranges available

• Lead-free available