ARF1501

RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

The is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

• Specified 250 Volt, 27.12 MHz Characteristics:

•  Output Power = 750 Watts.

•  Gain = 17dB Class C

•  Efficiency > 75%

• High Performance Power RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.