IRFS11N50APBF

VISHAY  IRFS11N50APBF  晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V

The is a N-channel enhancement-mode Power MOSFET with low gate charge.

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Simple drive requirements

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Improved gate, avalanche and dynamic dV/dt ruggedness

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Fully characterized capacitance and avalanche voltage and current

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Effective COSS specified