VS-FB190SA10
VISHAY VS-FB190SA10 单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V
The is a 100V N-channel Power MOSFET, high current density power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design and very low on-resistance. The isolated package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500W. The low thermal resistance and easy connection to the package contribute to its universal acceptance throughout the industry.
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- Fully isolated package
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- Fully avalanche rated
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- Dynamic dV/dt rating
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- Low drain to case capacitance
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- Low internal inductance
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- Easy to use and parallel