AFT21S140W02GSR3

RF Power Transistor,2110 to 2170MHz, 112W, Typ Gain in dB is 19.3 @ 2140MHz, 28V, LDMOS, SOT1802

Overview

The AFT21S140W02SR3 and 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

## Features RF Performance Tables

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 19.0| 33.9| 6.7| –32.4| –15

2140 MHz| 19.3| 33.5| 6.7| –32.6| –24

2170 MHz| 19.4| 33.2| 6.7| –32.7| –22