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Trans IGBT Chip N-CH 600V 85A 297600mW 3Pin3+Tab TO-247A Tube

This fast-switching IGBT transistor from Renesas will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 297600 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual collector configuration.