IPB47N10SL26ATMA1

Infineon SIPMOS 系列 Si N沟道 MOSFET IPB47N10SL26ATMA1, 47 A, Vds=100 V, 3引脚 D2PAK TO-263封装

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 100V 47A TO263-3

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET IPB47N10SL26ATMA1, 47 A, Vds=100 V, 3引脚 D2PAK TO-263封装

艾睿:
This IPB47N10SL26ATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 175000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 47A 3-Pin2+Tab TO-263

Verical:
Trans MOSFET N-CH 100V 47A Automotive 3-Pin2+Tab D2PAK T/R