BSN20W

BSN20W N沟道MOSFET 50V 173mA/0.173A SOT-23/SC-59 marking/标记 8H0 甚高频应用

N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package

Win Source:
N-channel enhancement mode vertical D-MOS transistor