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IDW60C65D1

Rapid 1 and Rapid 2 power silicon diodes fill the gap between the SiC diodes and emitter-controlled diodes and now come in common cathode configuration with up to 80A/650V, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

Summary of Features:

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1.35V temperature-stable forward voltage V  F
.
Highest softness-factor for ultimate softness and low EMI filtering
.
Lowest I  rrm to provide low turn-on losses on the boost switch
.
For applications switching between 18kHz and 40kHz

Target Applications:

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Telecom
.
Server
.
PC Power
.
UPS
.
Welding
.
Adapter
.
Air condition
.
Home appliance
.
AC-DC

IDW60C65D1 PDF数据文档
图片 型号 厂商 下载
IDW60C65D1 Infineon 英飞凌
IDW60C65D1XKSA1 Infineon 英飞凌