TSKS5400S-ASZ

VISHAY  TSKS5400S-ASZ  红外发射器, 30 °, 侧视, 100 mA, 1.3 V, 800 ns

The is a 950nm Infrared Emitting Diode in GaAs technology with high radiant power. It is suitable for high pulse current operation and good spectral matching with Si photo-detectors.

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High reliability

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High radiant power

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High radiant intensity

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Low forward voltage

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±30° Angle of half intensity