SIJ482DP-T1-GE3
VISHAY SIJ482DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0051 ohm, 10 V, 1.5 V
The is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, synchronous rectification and high current switching applications.
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- 100% Rg tested
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- 100% UIS tested
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- Capable of operating with 5V gate drive
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- Halogen-free
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- -55 to 150°C Operating temperature range