STW15NM60N

N沟道600V - 0.270ヘ - 14A - D2 / I2PAK - TO- 220 / FP - TO- 247第二代MDmesh⑩功率MOSFET N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET

N-Channel 600V 14A Tc 125W Tc Through Hole TO-247-3

得捷:
MOSFET N-CH 600V 14A TO247-3

贸泽:
MOSFET N Ch 600V 0.270 ohm 14A

艾睿:
Compared to traditional transistors, STW15NM60N power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans MOSFET N-CH 600V 14A 3-Pin3+Tab TO-247 Tube

Win Source:
MOSFET N-CH 600V 14A TO-247